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| 1. 1. 2. 3. (http://www.renesas.com) 4. 5. 6. 7. 8. H5N2509P N MOSFET ADJ-208-1535B (Z) 3 2002.06 * * * * * RDS(on) = 0.053 typ. IDSS = 1 A max (at VDS = 250 V, VGS = 0 V) tf = 110 ns typ (at ID = 15 A, RL = 8.3 , VGS = 10 V) (Qg) Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A) TO-3P D G 1 S 1. 2. 2 3 ( 3. ) H5N2509P (Ta = 25C) * * VDSS VGSS ID ID (pulse) IDR IDR (pulse) IAP 3 Pch 2 ch-c Tch Tstg 1. PW 3. Tch 10s, duty cycle 150 1% 2. Tc = 25 1 250 30 30 120 30 120 30 150 0.833 150 -55 to +150 V V A A A A A W C/W C C 1 (Ta = 25C) * V(BR)DSS IGSS IDSS * * VGS(off) RDS(on) |yfs| Ciss Coss Crss * * td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr 4. Min 250 -- -- 3.0 -- 17 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 0.053 28 3600 450 115 48 120 190 110 110 19 53 0.9 210 1.8 Max -- 0.1 1 4.0 0.069 -- -- -- -- -- -- -- -- -- -- -- 1.35 -- -- V A A V S pF pF pF ns ns ns ns nC nC nC V ns C ID = 10 mA, VGS = 0 VGS = 30 V, VDS = 0 VDS = 250 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 15 A, VGS = 10 V ID = 15 A, VDS = 10 V VDS = 25 V VGS = 0 f = 1 MHz ID = 15 A VGS = 10 V RL = 8.3 Rg = 10 VDD = 200 V VGS = 10 V ID = 30 A IF = 30 A, VGS = 0 IF = 30 A, VGS = 0 diF/dt = 100 A/s 4 4 2 H5N2509P 200 Pch (W) (A) 1000 300 10 PW DC Op er at 150 100 1 = 10 m 10 ms s( ID 0 s s 30 100 10 3 50 ion (T 1s c= ho t) 1R DS(on) 0.3 0.1 Ta = 25C 1 3 10 30 25 C ) 0 50 100 150 Tc (C) 200 100 300 1000 VDS (V) 100 10 V (A) 100 V DS = 10 V 7V (A) 80 8V 80 ID 60 6V 40 5.5 V 20 5V VGS = 4.5 V 0 4 8 12 16 20 VDS (V) ID 60 40 Tc = 75C 25C -25C 2 4 6 8 VGS (V) 10 20 0 3 H5N2509P RDS(on) (m) VDS(on) (V) 5 200 VGS = 10 V, 15 V 4 100 3 50 2 I D = 30 A 15 A 5A 0 10 4 8 12 16 VGS (V) 20 1 2 5 10 20 50 ID (A) 100 20 1 RDS(on) (m) 200 V GS = 10 V I D = 30 A 100 |yfs| (S) 50 20 10 5 25C 75C Tc = -25C 160 120 80 5A 40 0 -40 15 A 2 1 0.5 0.2 0.2 0.5 1 2 5 V DS = 10 V 10 20 ID (A) 50 100 0 40 80 120 Tc (C) 160 4 H5N2509P 1000 500 50000 20000 10000 VGS = 0 f = 1 MHz trr (ns) C (pF) 200 100 50 5000 2000 1000 500 Ciss Coss Crss 0 20 40 60 80 V DS (V) 100 20 10 0.1 di / dt = 100 A / s V GS = 0, Ta = 25C 0.3 1 3 10 30 I DR (A) 100 200 100 50 500 20 10000 V DS (V) V GS (V) I D = 30 A 400 V DD = 50 V 100 V 200 V VDS VGS 16 t (ns) V GS = 10 V, V DD = 125 V PW = 10 s, duty 1 % R G =10 1000 t d(off) 300 12 200 8 100 tf t d(on) tr 160 0 200 10 0.1 0.3 1 3 10 30 I D (A) 100 100 V DD = 200 V 100 V 50 V 40 80 120 4 0 Qg (nC) 5 H5N2509P I DR (A) VGS(off) (V) 100 5 V DS = 10 V 80 V GS = 0 V 60 4 I D = 10mA 3 1mA 0.1mA 40 10 V 2 20 5V 1 0 -50 0 0.4 0.8 1.2 1.6 V SD (V) 2.0 0 50 100 150 200 Tc (C) Vin Monitor D.U.T. RL 10 Vin 10 V Vout Monitor 90% Vin 10% 10% 90% td(on) tr 90% td(off) tf 10% V DD = 125 V Vout 6 H5N2509P 3 Tc = 25C 1 s (t) D=1 0.5 0.3 0.2 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 0.833C/W, Tc = 25C PDM D= PW T 0.03 0.02 1 0.0 1s PW T t ho pu lse 0.01 10 100 1m 10 m PW (s) 100 m 1 10 7 H5N2509P As of January, 2002 5.0 0.3 15.6 0.3 4.8 0.2 1.5 Unit: mm 0.5 1.0 3.2 0.2 14.9 0.2 19.9 0.2 1.6 1.4 Max 2.0 2.8 2.0 1.0 0.2 18.0 0.5 0.6 0.2 3.6 0.9 1.0 5.45 0.5 5.45 0.5 Hitachi Code JEDEC JEITA Mass (reference value) TO-3P -- Conforms 5.0 g 8 0.3 H5N2509P 1. 2. 3. 4. 5. 6. 7. 8. 100-0004 (011) 261-3131 ( (022) 223-0121 ( (03) 3212-1111 ( (0263) 36-6632 (045) 451-5000 ( (076) 433-8511 ( (076)263-2351 ( (052) 243-3111 ( ) ) ) ) ) ) ) 62 (03) 3270-2111 (053) 454-6281 ( (06) 6616-1111 ( (075) 223-5611 ( (078) 261-9677 ( (082) 223-4111 ( (0857) 22-4270 ( (087) 831-2111 ( (092) 852-1111 ( ) ) ) ) ) ) ) ) http://www.hitachisemiconductor.com/sic/jsp/japan/jpn/Sicd/Japanese/map/frame.html 100-0004 6 2 E-Mail:csc@sic.hitachi.co.jp E-Mail:document@sic.hitachi.co.jp (03) 5201-5220 (03) 5201-5189 Copyright (c) Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. http://www.hitachisemiconductor.com/jp/ Colophon 5.0 9 |
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